US Patent Application 18352182. SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Junhyoung Kim of Seoul (KR)

Jisung Cheon of Ansan-si (KR)

Yoonhwan Son of Seoul (KR)

Seungmin Lee of Seoul (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18352182 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with multiple layers and structures.

  • The device includes a lower structure and two upper structures with gate layers.
  • Separation structures and a memory vertical structure penetrate the upper and lower gate layers.
  • A contact plug and the memory vertical structure have bent portions on their lateral surfaces.
  • The bent portions are located between specific height levels of the gate layers.


Original Abstract Submitted

A semiconductor device includes a lower structure; a first upper structure including lower gate layers on the lower structure; a second upper structure including upper gate layers on the first upper structure; separation structures penetrating the first and second upper structures on the lower structure; a memory vertical structure penetrating the lower and upper gate layers between the separation structures; and a first contact plug penetrating the first and second upper structures and spaced apart from the lower and upper gate layers. Each of the first contact plug and the memory vertical structure includes a lateral surface having a bent portion. The bent portion of the lateral surface is disposed between a first height level on which an uppermost gate layer of the lower gate layers is disposed and a second height level on which a lowermost gate layer of the upper gate layers is disposed.