US Patent Application 18351985. Dielectric Gap-Filling Process for Semiconductor Device simplified abstract
Contents
Dielectric Gap-Filling Process for Semiconductor Device
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Bang-Tai Tang of New Taipei City (TW)
Dielectric Gap-Filling Process for Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351985 titled 'Dielectric Gap-Filling Process for Semiconductor Device
Simplified Explanation
The patent application describes a semiconductor device and a method for its formation.
- The method involves creating a trench in a substrate.
- A liner layer is then formed along the sidewalls and bottom of the trench.
- A silicon-rich layer is formed over the liner layer.
- The silicon-rich layer is created by flowing a first silicon precursor into a process chamber for a specific time interval.
- Then, a second silicon precursor and a first oxygen precursor are flowed into the process chamber for a different time interval.
- A dielectric layer is formed over the silicon-rich layer.
Original Abstract Submitted
A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.
