US Patent Application 18351957. Interconnect Structure and Method of Forming Thereof simplified abstract

Interconnect Structure and Method of Forming Thereof

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shu-Cheng Chin of Hsinchu (TW)

Ming-Yuan Gao of Hsinchu (TW)

Chen-Yi Niu of Hsinchu (TW)

Yen-Chun Lin of Hsinchu (TW)

Hsin-Ying Peng of Hsinchu (TW)

Chih-Hsiang Chang of Hsinchu (TW)

Pei-Hsuan Lee of Taipei City (TW)

Chi-Feng Lin of Hsinchu (TW)

Chih-Chien Chi of Hsinchu (TW)

Hung-Wen Su of Jhubei City (TW)

Interconnect Structure and Method of Forming Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18351957 titled 'Interconnect Structure and Method of Forming Thereof

Simplified Explanation

The patent application describes a method for manufacturing an interconnect structure.

• The method involves creating an opening in a dielectric layer to expose a top surface of a conductive feature.
• A barrier layer is then formed on the sidewalls of the opening to protect the exposed surface.
• The top surface of the conductive feature is treated to improve its performance.
• A liner layer is applied over the barrier layer to provide additional protection.
• Finally, the opening is filled with a conductive material to complete the interconnect structure.

Original Abstract Submitted

A method of manufacturing an interconnect structure includes forming an opening through a dielectric layer. The opening exposes a top surface of a first conductive feature. The method further includes forming a barrier layer on sidewalls of the opening, passivating the exposed top surface of the first conductive feature with a treatment process, forming a liner layer over the barrier layer, and filling the opening with a conductive material. The liner layer may include ru