US Patent Application 18351957. Interconnect Structure and Method of Forming Thereof simplified abstract
Contents
Interconnect Structure and Method of Forming Thereof
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shu-Cheng Chin of Hsinchu (TW)
Hsin-Ying Peng of Hsinchu (TW)
Chih-Hsiang Chang of Hsinchu (TW)
Pei-Hsuan Lee of Taipei City (TW)
Chih-Chien Chi of Hsinchu (TW)
Hung-Wen Su of Jhubei City (TW)
Interconnect Structure and Method of Forming Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351957 titled 'Interconnect Structure and Method of Forming Thereof
Simplified Explanation
The patent application describes a method for manufacturing an interconnect structure.
- The method involves creating an opening in a dielectric layer to expose a top surface of a conductive feature.
- A barrier layer is then formed on the sidewalls of the opening to protect the exposed surface.
- The top surface of the conductive feature is treated to improve its performance.
- A liner layer is applied over the barrier layer to provide additional protection.
- Finally, the opening is filled with a conductive material to complete the interconnect structure.
Original Abstract Submitted
A method of manufacturing an interconnect structure includes forming an opening through a dielectric layer. The opening exposes a top surface of a first conductive feature. The method further includes forming a barrier layer on sidewalls of the opening, passivating the exposed top surface of the first conductive feature with a treatment process, forming a liner layer over the barrier layer, and filling the opening with a conductive material. The liner layer may include ru
