US Patent Application 18351605. FABRICATION OF EMBEDDED MEMORY DEVICES UTILIZING A SELF ASSEMBLED MONOLAYER simplified abstract

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FABRICATION OF EMBEDDED MEMORY DEVICES UTILIZING A SELF ASSEMBLED MONOLAYER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION


Inventor(s)

Ashim Dutta of MENANDS NY (US)

Ekmini Anuja De Silva of Slingerlands NY (US)

Chih-Chao Yang of Glenmont NY (US)

FABRICATION OF EMBEDDED MEMORY DEVICES UTILIZING A SELF ASSEMBLED MONOLAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18351605 titled 'FABRICATION OF EMBEDDED MEMORY DEVICES UTILIZING A SELF ASSEMBLED MONOLAYER

Simplified Explanation

The patent application describes a semiconductor device structure with a metallization stack and a bi-layer dielectric cap.

  • The structure includes one or more patterned metal layers and at least one memory device.
  • The method for forming the metallization stack involves receiving a structure with a metallization layer and a first dielectric cap layer.
  • The metallization layer has a logic area and a memory area.
  • A memory stack is formed over the first dielectric cap layer, and a self-assembled monolayer is formed over the memory stack.
  • A second dielectric cap layer is formed on the first dielectric cap layer, but not on the self-assembled monolayer.


Original Abstract Submitted

A semiconductor device structure includes a metallization stack comprising one or more patterned metal layers. A bi-layer dielectric cap is disposed on and in contact with the metallization stack. At least one memory device is disposed on the bi-layer dielectric cap. A method for forming the metallization stack includes receiving a structure comprising a metallization layer and a first dielectric cap layer formed over the metallization layer. The metallization layer includes a logic area and a memory area. At least one memory stack is formed over the first dielectric cap layer. A self-assembled monolayer is formed over and in contact with the memory stack. A second dielectric cap layer is formed on and in contact with the first dielectric cap layer. The second dielectric cap layer is not formed on the self-assembled monolayer.

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