US Patent Application 18351588. Hybrid Configurable RF Power Amplifier simplified abstract
Contents
Hybrid Configurable RF Power Amplifier
Organization Name
Inventor(s)
Jason Xiangdong Deng of Greensboro NC (US)
Hybrid Configurable RF Power Amplifier - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351588 titled 'Hybrid Configurable RF Power Amplifier
Simplified Explanation
The abstract describes a radio frequency power amplifier that includes various circuits and components to amplify RF signals.
- The RF power amplifier includes a driver stage amplifier circuit, first and second power amplifier output stage circuits, an inter-stage impedance matching network, and first and second bias circuits.
- The driver stage amplifier circuit amplifies the RF signal and outputs it to the first input of the first and second power amplifier output stage circuits.
- The first and second power amplifier output stage circuits each consist of a first and second array of bipolar junction transistors (BJTs).
- An inter-stage impedance matching network connects the driver stage circuit's output to the first input of the power amplifier output stage circuits, ensuring efficient signal transfer.
- The first and second bias circuits connect the driver stage amplifier circuit's output to the second input of the power amplifier output stage circuits.
- The first bias circuit and the first output stage circuit set a quiescent point (operating point) for each BJT in the first array to a first value.
- Similarly, the second bias circuit and the second output stage circuit set a quiescent point for each BJT in the second array to a second value.
- This configuration allows for precise control and optimization of the amplification process in the power amplifier.
Original Abstract Submitted
A radio frequency (RF) power amplifier is provided. In one aspect, the RF power amplifier includes a driver stage amplifier circuit, first and second power amplifier output stage circuits that each include a first and second array of bipolar junction transistors (BJTs), respectively, an inter-stage impedance matching network connecting the driver stage circuit’s output to a respective first input of the first and second output stage circuits, and first and second bias circuits connecting the driver stage amplifier circuit’s output to a respective second input of the first and second power amplifier output stage circuits. The first bias circuit and the first output stage circuit can set a quiescent point of each BJT in the first array to a first value, while the second bias circuit and the second output stage circuit are configured to set a quiescent point of each BJT in the second array to a second value.
