US Patent Application 18351064. Method of Filling Gaps with Carbon and Nitrogen Doped Film simplified abstract
Contents
Method of Filling Gaps with Carbon and Nitrogen Doped Film
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Method of Filling Gaps with Carbon and Nitrogen Doped Film - A simplified explanation of the abstract
This abstract first appeared for US patent application 18351064 titled 'Method of Filling Gaps with Carbon and Nitrogen Doped Film
Simplified Explanation
- The patent application describes a method for etching a semiconductor substrate to create a trench and depositing a dielectric layer using Atomic Layer Deposition (ALD). - The dielectric layer is formed by pulsing Hexachlorodisilane (HCD) and triethylamine onto the semiconductor substrate in a specific sequence. - The ALD cycle is followed by an anneal process on the dielectric layer. - The innovation lies in the specific combination of etching, ALD, and anneal processes to create a high-quality dielectric layer that extends into the trench.
Original Abstract Submitted
A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.
