US Patent Application 18349476. Post-CMP Cleaning and Apparatus simplified abstract
Contents
Post-CMP Cleaning and Apparatus
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Fu-Ming Huang of Shengang Township (TW)
Liang-Guang Chen of Hsinchu (TW)
Ting-Kui Chang of New Taipei City (TW)
Chun-Chieh Lin of Hsinchu (TW)
Post-CMP Cleaning and Apparatus - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349476 titled 'Post-CMP Cleaning and Apparatus
Simplified Explanation
The patent application describes a method for cleaning a wafer after a Chemical Mechanical Polish (CMP) process.
- The method involves using two brushes to clean the wafer.
- The first brush rotates to perform the first post-CMP cleaning.
- The second brush also rotates to perform the second post-CMP cleaning.
- Both post-CMP cleanings are done simultaneously.
- The purpose of this method is to improve the cleaning efficiency and effectiveness of the wafer after the CMP process.
Original Abstract Submitted
A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.
