US Patent Application 18349433. SEMICONDUCTOR APPARATUS simplified abstract
Contents
SEMICONDUCTOR APPARATUS
Organization Name
Inventor(s)
Dongho Ahn of Hwaseong-si (KR)
Changseung Lee of Yongin-si (KR)
SEMICONDUCTOR APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349433 titled 'SEMICONDUCTOR APPARATUS
Simplified Explanation
The patent application describes a semiconductor apparatus with multiple semiconductor unit devices.
- Each semiconductor unit device is positioned between two insulating layers that are separated in a direction perpendicular to the substrate.
- The semiconductor unit devices consist of a selection device layer and a phase change material layer that run parallel to the substrate.
- The phase change material layer has a superlattice-like structure.
- The phase change material layer is located along a recess portion created by the first insulating layer, second insulating layer, and selection device layer.
Original Abstract Submitted
A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
