US Patent Application 18348904. SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jongsoon Park of Hwaseong-si (KR)
Bokyoung Lee of Hwaseong-si (KR)
Jeongyun Lee of Yongin-si (KR)
Hyunggoo Lee of Hwaseong-si (KR)
Yeondo Jung of Hwaseong-si (KR)
Haegeon Jung of Yongin-si (KR)
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18348904 titled 'SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a device isolation layer on a substrate, pattern groups consisting of fin patterns extending in one direction, and gate structures extending in another direction to intersect the fin patterns. The first pattern group includes first fin patterns arranged with a specific pitch in the second direction. The first pattern group also includes a planar portion extending from a recess portion, which is spaced apart from one of the first fin patterns by a certain distance in the second direction. The planar portion has a width greater than the pitch, and the distance between the recess portion and the fin pattern is approximately 0.8 to 1.2 times the pitch.
Key points of the patent/innovation:
- A semiconductor device with a device isolation layer, fin patterns, and gate structures. - The fin patterns are arranged in a specific pitch in one direction. - The first pattern group includes a planar portion extending from a recess portion. - The recess portion is spaced apart from one of the fin patterns by a certain distance in the second direction. - The width of the planar portion is greater than the pitch. - The distance between the recess portion and the fin pattern is approximately 0.8 to 1.2 times the pitch.
Original Abstract Submitted
A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.
