US Patent Application 18348531. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kuo-Pi Tseng of Hsinchu City (TW)

De-Fang Chen of Hsinchu City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18348531 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a device that includes various components such as a substrate, a channel layer, a gate structure, source/drain epitaxial structures, and a bottom dielectric structure.

• The device has a substrate, which serves as a base for the other components.
• A channel layer is placed on top of the substrate.
• A gate structure is positioned across the channel layer, controlling the flow of current.
• There are two source/drain epitaxial structures, located on opposite sides of the channel layer and connected to it.
• A bottom dielectric structure is situated between one of the source/drain epitaxial structures and the substrate.
• In a cross-sectional view, the maximum width of the first source/drain epitaxial structure is equal to or greater than the maximum width of the bottom dielectric structure.

Original Abstract Submitted

A device includes a substrate, a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, and a bottom dielectric structure. The channel layer is over the substrate. The gate structure is across the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer and are connected to the channel layer. The bottom dielectric structure is between the first source/drain epitaxial structure and the substrate. A maximum width of the first source/drain epitaxial structure is greater than or equal to a maximum width of the bottom dielectric structure in a cross-sectional view.