US Patent Application 18348421. CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEMT DEVICE simplified abstract

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CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEMT DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Ming-Cheng Lin of Yilan City (TW)

Chen-Bau Wu of Zhubei City (TW)

Chun Lin Tsai of Hsin-Chu (TW)

Haw-Yun Wu of Zhubei City (TW)

Liang-Yu Su of Yunlin County (TW)

Yun-Hsiang Wang of Hsin-Chu City (TW)

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEMT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18348421 titled 'CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEMT DEVICE

Simplified Explanation

The patent application describes a method of creating a high electron mobility transistor (HEMT) device. Here are the key points:

  • The method starts by applying a protective layer over a substrate.
  • Within this protective layer, contacts for the source and drain are formed.
  • A portion of the protective layer is then removed to create a cavity.
  • The cavity is formed by the sidewalls of the protective layer and the sidewall of the source contact.
  • A gate structure is then created within the protective layer, positioned between the drain contact and the cavity.
  • Finally, a cap structure is formed within the cavity.

Overall, this method allows for the creation of a HEMT device with specific structures and configurations that can enhance its performance.


Original Abstract Submitted

In some embodiments, the present disclosure relates to a method of forming a high electron mobility transistor (HEMT) device. The method includes forming a passivation layer over a substrate. A source contact and a drain contact are formed within the passivation layer. A part of the passivation layer is removed to form a cavity. The cavity has a lower portion formed by a first sidewall and a second sidewall of the passivation layer and an upper portion formed by the first sidewall of the passivation layer and a sidewall of the source contact. A gate structure is formed within the passivation layer between the drain contact and the cavity. A cap structure is formed within the cavity.

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