US Patent Application 18347850. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyung Suk Jung of Suwon-si (KR)
Ki Hyun Hwang of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347850 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that improves the performance and reliability of an element by increasing the capacitance of a capacitor.
- The device uses a capacitor dielectric film made of a combination of ferroelectric and paraelectric materials.
- The device includes two electrodes that are spaced apart, with the capacitor dielectric film placed between them.
- The capacitor dielectric film consists of a first dielectric film and a second dielectric film.
- The first dielectric film can be either a monometal oxide film or a bimetal oxide film, and it has an orthorhombic crystal system.
- The second dielectric film is made of a paraelectric material.
- The dielectric constant of the capacitor dielectric film is higher than the dielectric constant of the second dielectric film.
Original Abstract Submitted
There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
