US Patent Application 18347775. INTEGRATED CHIP HAVING A BURIED POWER RAIL simplified abstract
Contents
INTEGRATED CHIP HAVING A BURIED POWER RAIL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Marcus Johannes Henricus Van Dal of Linden (BE)
Gerben Doornbos of Kessel-Lo (BE)
INTEGRATED CHIP HAVING A BURIED POWER RAIL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347775 titled 'INTEGRATED CHIP HAVING A BURIED POWER RAIL
Simplified Explanation
The abstract of the patent application describes an integrated chip with specific components and structures. Here is a simplified explanation of the abstract:
- The patent application is about an integrated chip that has a channel structure on a first substrate.
- The chip also includes a gate electrode that is positioned over the channel structure.
- There is a first source/drain structure that is adjacent to the channel structure but is not directly aligned with the gate electrode.
- A conductive structure is present on the first substrate and is located underneath the first source/drain structure.
- A first contact extends from the first source/drain structure to the conductive structure.
In summary, the patent application describes an integrated chip design that includes a specific arrangement of components and structures to achieve certain functionalities.
Original Abstract Submitted
The present disclosure relates to an integrated chip including a channel structure on a first substrate. A gate electrode overlies the channel structure. A first source/drain structure abuts the channel structure and is offset from the gate electrode. A conductive structure is disposed on the first substrate and underlies the first source/drain structure. A first contact extends from the first source/drain structure to the conductive structure.
