US Patent Application 18347264. SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Hung Liao of Taichung (TW)
Chia-Hao Chang of Hsinchu City (TW)
Huang-Lin Chao of Hillsboro OR (US)
SEMICONDUCTOR DEVICE STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18347264 Titled 'SEMICONDUCTOR DEVICE STRUCTURE'
Simplified Explanation
This abstract describes the structure of a semiconductor device. It consists of a gate structure and a source/drain structure formed on a substrate. A contact structure is also present, along with a first cap layer formed over it. Additionally, there is a dielectric structure that extends from the top surface of the first cap layer into the contact structure. The dielectric structure separates the contact structure from the source/drain structure.
Original Abstract Submitted
A semiconductor device structure includes a gate structure formed over a substrate. The semiconductor device structure also includes a source/drain structure formed beside the gate structure. The semiconductor device structure further includes a contact structure formed over the source/drain structure. The semiconductor device structure also includes a first cap layer formed over the contact structure. The semiconductor device structure further includes a dielectric structure extending from a top surface of the first cap layer into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.
