US Patent Application 18347198. METHOD FOR FORMING PATTERNED MASK LAYER simplified abstract
Contents
METHOD FOR FORMING PATTERNED MASK LAYER
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chien-Wen Lai of Hsinchu City (TW)
Chih-Min Hsiao of Taoyuan (TW)
METHOD FOR FORMING PATTERNED MASK LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347198 titled 'METHOD FOR FORMING PATTERNED MASK LAYER
Simplified Explanation
The patent application describes a method for creating a patterned mask layer.
- A layer is formed over a substrate.
- First and second strip structures are formed over the layer.
- A spacer layer is formed over the first and second strip structures.
- Third and fourth strip structures are formed between the first and second strip structures, with a connecting part between them.
- The spacer layer is removed.
- The first, second, third, and fourth strip structures together form a patterned mask layer.
Original Abstract Submitted
A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.
