US Patent Application 18347090. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Cho-eun Lee of Pocheon-si (KR)
Seok-hoon Kim of Suwon-si (KR)
Edward Cho of Seongnam-si (KR)
Seung-hun Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347090 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a fin-type active region on a substrate and a source/drain region in a recess region within the fin-type active region. The source/drain region consists of multiple layers, including a first source/drain material layer, a second source/drain material layer, and a first dopant diffusion barrier layer.
Bullet points explaining the patent/innovation:
- The semiconductor device has a fin-type active region that extends parallel to the substrate's upper surface. - Within the fin-type active region, there is a recess region where the source/drain region is located. - The source/drain region is composed of multiple layers, including a first source/drain material layer and a second source/drain material layer. - An interface between the first and second source/drain material layers is protected by a first dopant diffusion barrier layer. - The first dopant diffusion barrier layer prevents unwanted diffusion of dopants between the two source/drain material layers. - This design helps to enhance the performance and reliability of the semiconductor device. - The use of a fin-type active region allows for better control of the device's electrical properties. - The multiple layers in the source/drain region provide improved conductivity and efficiency. - The first dopant diffusion barrier layer ensures the integrity of the interface between the source/drain material layers, preventing degradation of device performance. - Overall, this semiconductor device design offers improved functionality and performance in various electronic applications.
Original Abstract Submitted
A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.
