US Patent Application 18347023. SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Soonmoon Jung of Seongnam-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18347023 Titled 'SEMICONDUCTOR DEVICES'
Simplified Explanation
This abstract describes a semiconductor device that consists of two transistors stacked on top of each other on a substrate. The first transistor has a gate structure, source/drain layers on each side of the gate, and semiconductor patterns that are separated vertically. These semiconductor patterns go through the gate structure and make contact with the source/drain layers. The division pattern in between the transistors is made of an insulating material. The second transistor also has a gate structure, source/drain layers, and semiconductor patterns that are vertically spaced apart. These semiconductor patterns also go through the gate structure and make contact with the source/drain layers. Importantly, the source/drain layer of the first transistor does not directly touch the source/drain layer of the second transistor.
Original Abstract Submitted
A semiconductor device includes a first transistor, a division pattern, and a second transistor sequentially stacked on a substrate. The first transistor includes a first gate structure, a first source/drain layer at each of opposite sides of the first gate structure, and first semiconductor patterns spaced apart from each other in a vertical direction. Each of the first semiconductor patterns extends through the first gate structure and contacts the first source/drain layer. The division pattern includes an insulating material. The second transistor includes a second gate structure, a second source/drain layer at each of opposite sides of the second gate structure, and second semiconductor patterns spaced apart from each other in the vertical direction. Each of the second semiconductor patterns extends through the second gate structure and contacts the second source/drain layer. The first source/drain layer does not directly contact the second source/drain layer.
