US Patent Application 18346627. METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME

Organization Name

Samsung Electronics Co., Ltd.


Inventor(s)

Wonhee Cho of SEOUL (KR)


Dongeun Shin of SEOUL (KR)


METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18346627 Titled 'METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME'

Simplified Explanation

The abstract describes a method for dividing memory blocks in a nonvolatile memory device into different groups. When a write command is received for multiple memory blocks, the data write operation is performed on one memory block during a specific time interval, and then on the remaining memory blocks during another time interval. This allows for efficient data writing in the memory device.


Original Abstract Submitted

Each of a plurality of memory blocks of a nonvolatile memory device is divided into two or more wordline groups having different characteristics. A write command for at least two memory blocks among the plurality of memory blocks is received. During a first partial time interval included in an entire write time interval for two or more memory blocks, a data write operation is performed on a wordline group included in one memory block among the two or more memory blocks in response to a reception of an address for the one memory block. During a second other partial time interval included in the entire write time interval, a data write operation is performed on wordline groups included in the two or more memory blocks in response to a reception of an address for the two or more memory blocks.