US Patent Application 18346622. Mechanism for FinFET Well Doping simplified abstract
Contents
Mechanism for FinFET Well Doping
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun Hsiung Tsai of Xinpu Township (TW)
Yan-Ting Lin of Baoshan Township (TW)
Clement Hsingjen Wann of Carmel NY (US)
Mechanism for FinFET Well Doping - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18346622 Titled 'Mechanism for FinFET Well Doping'
Simplified Explanation
This abstract describes a method for improving the performance of finFET devices by doping the well regions. The method involves depositing doped films before forming isolation structures, which helps maintain a low dopant concentration in the channel regions. The isolation structures are filled with a flowable dielectric material, which is converted to silicon oxide using microwave annealing. This conversion process does not cause dopant diffusion. Additional well implants may be performed to create deep wells, and microwave annealing can also be used to fix any defects in the substrate and fins. Overall, this method enhances transistor performance in finFET devices.
Original Abstract Submitted
The embodiments of mechanisms for doping wells of finFET devices described in this disclosure utilize depositing doped films to dope well regions. The mechanisms enable maintaining low dopant concentration in the channel regions next to the doped well regions. As a result, transistor performance can be greatly improved. The mechanisms involve depositing doped films prior to forming isolation structures for transistors. The dopants in the doped films are used to dope the well regions near fins. The isolation structures are filled with a flowable dielectric material, which is converted to silicon oxide with the usage of microwave anneal. The microwave anneal enables conversion of the flowable dielectric material to silicon oxide without causing dopant diffusion. Additional well implants may be performed to form deep wells. Microwave anneal(s) may be used to anneal defects in the substrate and fins.
