US Patent Application 18344944. MICROELECTRONIC ASSEMBLIES HAVING CONDUCTIVE STRUCTURES WITH DIFFERENT THICKNESSES simplified abstract
MICROELECTRONIC ASSEMBLIES HAVING CONDUCTIVE STRUCTURES WITH DIFFERENT THICKNESSES
Organization Name
Inventor(s)
Brandon C. Marin of Gilbert AZ (US)
Andrew James Brown of Phoenix AZ (US)
Dilan Seneviratne of Phoenix AZ (US)
Praneeth Kumar Akkinepally of Chandler AZ (US)
Frank Truong of Gilbert AZ (US)
MICROELECTRONIC ASSEMBLIES HAVING CONDUCTIVE STRUCTURES WITH DIFFERENT THICKNESSES - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18344944 Titled 'MICROELECTRONIC ASSEMBLIES HAVING CONDUCTIVE STRUCTURES WITH DIFFERENT THICKNESSES'
Simplified Explanation
The abstract describes microelectronic assemblies and their components. These assemblies include a substrate with a dielectric layer that contains an electroless catalyst, such as palladium, gold, silver, ruthenium, cobalt, copper, nickel, titanium, aluminum, lead, silicon, or tantalum. The dielectric layer also contains two conductive traces with different thicknesses. The first trace has a thickness between 4 um and 143 um, while the second trace has a thickness between 2 um and 141 um. The first trace is thicker than the second trace, and both traces have sloped sidewalls.
Original Abstract Submitted
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a dielectric layer, in a substrate, the dielectric layer including an electroless catalyst, wherein the electroless catalyst includes one or more of palladium, gold, silver, ruthenium, cobalt, copper, nickel, titanium, aluminum, lead, silicon, and tantalum; a first conductive trace having a first thickness in the dielectric layer, wherein the first thickness is between 4 um and 143 um; and a second conductive trace having a second thickness in the dielectric layer, wherein the second thickness is between 2 um and 141 um, wherein the first thickness is greater than the second thickness, and wherein the first conductive trace and the second conductive trace have sloped sidewalls.
