US Patent Application 18344794. INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE simplified abstract
Contents
INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE
Organization Name
Inventor(s)
Hyeon Gyu You of Hwaseong-si (KR)
Ga Room Kim of Hwaseong-si (KR)
In Gyum Kim of Bucheon-si (KR)
INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18344794 Titled 'INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE'
Simplified Explanation
This abstract describes an integrated circuit that consists of two active regions, a power rail, and a ground rail. The active regions are positioned in a specific direction and are separated from each other. The power rail and ground rail are also positioned in the same direction but are spaced apart from the active regions and each other. The circuit includes source/drain contacts that extend in a different direction and are located on either the first or second active region. Additionally, gate structures are present on both active regions. The power rail supplies power through source/drain contact vias, while the ground rail supplies a ground voltage through source/drain contact vias.
Original Abstract Submitted
An integrated circuit including a first active region and a second active region extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a power rail and a ground rail extending in the first direction and spaced apart from the first and second active regions and each other in the second direction; source/drain contacts extending in the second direction on at least a portion of the first or second active region, gate structures extending in the second direction and on at least a portion of the first and second active regions, a power rail configured to supply power through source/drain contact vias, and a ground rail configured to supply a ground voltage through source/drain contact vias.
