US Patent Application 18344057. GATE ALL AROUND STRUCTURE WITH ADDITIONAL SILICON LAYER AND METHOD FOR FORMING THE SAME simplified abstract

GATE ALL AROUND STRUCTURE WITH ADDITIONAL SILICON LAYER AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chen-Han Wang of Zhubei City (TW)

Pei-Hsun Wang of Kaohsiung City (TW)

Chun-Hsiung Lin of Zhubei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

GATE ALL AROUND STRUCTURE WITH ADDITIONAL SILICON LAYER AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18344057 Titled 'GATE ALL AROUND STRUCTURE WITH ADDITIONAL SILICON LAYER AND METHOD FOR FORMING THE SAME'

Simplified Explanation

The abstract describes a method for manufacturing a semiconductor structure. The process involves stacking layers of different semiconductor materials on a substrate and then patterning them to create fin structures. An insulating layer is then formed around the fin structures, followed by the creation of a dielectric fin structure. Source/drain structures are formed on the first fin structure, and a semiconductor layer is added on top. This semiconductor layer is then oxidized to form an oxide layer. Finally, a second source/drain structure is formed on the second fin structure.

Original Abstract Submitted

Methods for manufacturing a semiconductor structure are provided. The method includes alternately stacking first semiconductor material layers and second semiconductor layers over a substrate and patterning the first semiconductor material layers and the second semiconductor layers to form a first fin structure and a second fin structure. The method also includes forming an insulating layer around the first fin structure and the second fin structure and forming a dielectric fin structure over the insulating layer and spaced apart from the first fin structure and the second fin structure. The method also includes forming a first source/drain structure attached to the first fin structure and forming a semiconductor layer covering the first source/drain structure. The method also includes oxidizing the semiconductor layer to form an oxide layer and forming a second source/drain structure attached to the second fin structure after the oxide layer is formed.