US Patent Application 18343947. ISOLATION WITH MULTI-STEP STRUCTURE simplified abstract
Contents
ISOLATION WITH MULTI-STEP STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tien-Shao Chuang of Hsinchu City (TW)
Kuang-Cheng Tai of Hsinchu (TW)
Chun-Hung Chen of Hsinchu (TW)
Chih-Hung Hsieh of Hsin-Chu (TW)
Kuo-Hua Pan of Hsinchu City (TW)
Jhon-Jhy Liaw of Zhudong Township (TW)
ISOLATION WITH MULTI-STEP STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18343947 titled 'ISOLATION WITH MULTI-STEP STRUCTURE
Simplified Explanation
The abstract describes a semiconductor device structure that includes a semiconductor substrate with a first well region of a certain conductivity type. It also includes two fin structures protruding from the first well region, with an isolation structure between them. The sidewall surfaces of the fin structures extend from the bottom to the top of the isolation structure.
- Semiconductor device structure with fin structures and isolation structure
- Fin structures protrude from the first well region
- Isolation structure separates the fin structures
- Sidewall surfaces of the fin structures extend from bottom to top of the isolation structure
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate including a first well region of a first conductivity type. The semiconductor device structure also includes a first fin structure and an adjacent second fin structure formed in and protruding from the first well region. The semiconductor device structure also includes a first isolation structure formed in the first well region between the first fin structure and the second fin structure. A first sidewall surface of the first fin structure faces to a second sidewall surface of the second fin structure. The first sidewall surface and the second sidewall surface each extend along at least two directions from a bottom of the first isolation structure to a top of the first isolation structure.
