US Patent Application 18343784. SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
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SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18343784 Titled 'SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME'
Simplified Explanation
This abstract describes a semiconductor device that includes a transistor and multiple layers of metal. The first metal layer is connected to the transistor and has a lower wire. The second metal layer is on top of the first metal layer and has an upper wire that is connected to the lower wire. The second metal layer also includes a via structure and a line structure. The via structure is located in a via hole and is connected to the lower wire. It also has a barrier portion that extends vertically from the via portion to cover the inner surface of a line trench. The barrier portion is thicker at its lower level than at its upper level.
Original Abstract Submitted
A semiconductor device includes a transistor on a substrate, a first metal layer that is on the transistor and includes a lower wire electrically connected to the transistor, and a second metal layer on the first metal layer. The second metal layer includes an upper wire that is electrically connected to the lower wire and includes a via structure in a via hole and a line structure in a line trench. The via structure includes a via portion that is in the via hole and is coupled to the lower wire, and a barrier portion that vertically extends from the via portion to cover an inner surface of the line trench. The barrier portion is between the line structure and an insulating layer of the second metal layer. The barrier portion is thicker at its lower level than at its upper level.
