US Patent Application 18342861. MULTI-LATERAL RECESSED MIM STRUCTURE simplified abstract
Contents
MULTI-LATERAL RECESSED MIM STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Alexander Kalnitsky of San Francisco CA (US)
Ming Chyi Liu of Hsinchu City (TW)
Sheng-Chan Li of Tainan City (TW)
Sheng-Chau Chen of Tainan City (TW)
MULTI-LATERAL RECESSED MIM STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18342861 Titled 'MULTI-LATERAL RECESSED MIM STRUCTURE'
Simplified Explanation
The abstract describes an integrated chip that has a layered structure called a dielectric stack. The dielectric stack has multiple layers arranged in a specific pattern. The chip also has recessed areas on the side of the dielectric stack at different heights. These recessed areas are lined with a structure called a capacitor, which consists of conductive electrodes separated by a special material called a capacitor dielectric.
Original Abstract Submitted
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric stack has one or more surfaces that define a plurality of indentations recessed into a side of the dielectric stack at different vertical heights corresponding to the second plurality of layers. A capacitor structure lines the one or more surfaces of the dielectric stack. The capacitor structure includes conductive electrodes separated by a capacitor dielectric.
