US Patent Application 18342723. MEMORY CELL, SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL, AND MANUFACTURING METHOD THEREOF simplified abstract

MEMORY CELL, SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL, AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Kai-Tai Chang of Kaohsiung City (TW)

Tung-Ying Lee of Hsinchu City (TW)

MEMORY CELL, SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18342723 Titled 'MEMORY CELL, SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL, AND MANUFACTURING METHOD THEREOF'

Simplified Explanation

This abstract describes a semiconductor device that includes a memory array. The memory array consists of multiple layers, including a film stack, a memory layer, a selector layer, and word lines. The film stack is made up of alternating conductive and insulating layers. Each conductive layer is composed of two materials in direct contact with each other, with the second material having a lower resistivity than the first material.

Original Abstract Submitted

A semiconductor device includes a substrate and a memory array disposed over the substrate. The memory array includes at least one film stack disposed over the substrate, a memory layer disposed over the substrate and covering a sidewall and a top of the film stack, a selector layer disposed on the memory layer, and at least one word line disposed on the selector layer and extending transversely with respect to the film stack. The film stack includes conductive layers and insulating layers alternately arranged, each conductive layer includes a first material and a second material in direct contact with each other, and a resistivity value of the second material is lower than a resistivity value of the first material.