US Patent Application 18342146. Semiconductor Device and Method simplified abstract
Contents
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Cheng-Po Chau of Tainan City (TW)
Yun Chen Teng of New Taipei City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18342146 titled 'Semiconductor Device and Method
Simplified Explanation
The patent application describes a method for forming a semiconductor device and the resulting device itself.
- The method involves several steps, including depositing a dummy dielectric layer on a fin extending from a substrate.
- A dummy gate seed layer is then deposited on top of the dummy dielectric layer.
- The dummy gate seed layer is reflowed and then etched.
- Finally, a dummy gate material is selectively deposited over the dummy gate seed layer, forming a dummy gate structure.
- The resulting semiconductor device benefits from this method, which allows for the precise formation of the dummy gate structure.
Original Abstract Submitted
A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.
