US Patent Application 18341764. MEMORY DEVICE COMPRISING CONDUCTIVE PILLARS simplified abstract
Contents
MEMORY DEVICE COMPRISING CONDUCTIVE PILLARS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Chih Lai of Hsinchu County (TW)
Hung-Chang Sun of Kaohsiung City (TW)
Kuo-Chang Chiang of Hsinchu City (TW)
MEMORY DEVICE COMPRISING CONDUCTIVE PILLARS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18341764 Titled 'MEMORY DEVICE COMPRISING CONDUCTIVE PILLARS'
Simplified Explanation
The abstract describes a memory device that consists of multiple layers stacked on top of each other. These layers include conductive and dielectric layers. The memory material layer is located between the channel layer and the conductive and dielectric layers. The device also includes conductive pillars that are aligned in a direction perpendicular to the layers.
Original Abstract Submitted
A memory device includes a multi-layer stack, a channel layer, a memory material layer and a memory material layer. The multi-layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately along a first direction. The memory material layer is disposed between the channel layer and each of the conductive layers and the dielectric layers. The conductive pillars extend in the first direction, wherein the at least three conductive pillars are aligned along a second direction substantially perpendicular to the first direction.
