US Patent Application 18341506. DEPOSITION SYSTEM AND METHOD simplified abstract
Contents
DEPOSITION SYSTEM AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsuan-Chih Chu of Hsinchu (TW)
DEPOSITION SYSTEM AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18341506 titled 'DEPOSITION SYSTEM AND METHOD
Simplified Explanation
- The patent application describes a deposition system that aims to reduce costs in the sputtering process by increasing the interval between target changes. - The system includes an array of magnet members that generate a magnetic field and can redirect it based on target thickness measurement data. - By tilting at least one magnet member in the array, the magnetic field can be adjusted or redirected to focus on areas of the target where more material remains. - This increased focus leads to more ion bombardment, specifically argon ion bombardment, on the targeted area. - The increased ion bombardment results in more uniform erosion on the target surface. - The overall goal of this innovation is to improve the efficiency and effectiveness of the sputtering process, ultimately reducing costs.
Original Abstract Submitted
A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.
