US Patent Application 18341421. METHOD OF USING POLISHING PAD simplified abstract

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METHOD OF USING POLISHING PAD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

ChunHung Chen of Hsinchu (TW)


Jung-Yu Li of Hsinchu (TW)


Sheng-Chen Wang of Hsinchu (TW)


Shih-Sian Huang of Hsinchu (TW)


METHOD OF USING POLISHING PAD - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 18341421 Titled 'METHOD OF USING POLISHING PAD'

Simplified Explanation

This abstract describes a method of using a polishing pad. The method involves applying a slurry to a specific location on the polishing pad and then rotating the pad. The slurry is spread across different regions of the pad at different rates. The first region, which has a set of grooves, is spread at a certain rate. The second region, which surrounds the first region and also has grooves, is spread at a different rate. Finally, the third region, which surrounds the second region and has its own set of grooves, is spread at a slower rate than the first two regions.


Original Abstract Submitted

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves. The method further includes spreading the slurry across a second region, surrounding the first region of the polishing pad at a second rate different from the first rate, wherein the second region includes a plurality of second grooves. The method further includes spreading the slurry across a third region, surrounding the second region of the polishing pad at a third rate less than the first rate and the second rate, wherein the third region includes a plurality of third grooves.