US Patent Application 18341400. ELECTROMIGRATION EVALUATION METHODOLOGY WITH CONSIDERATION OF BOTH SELF-HEATING AND HEAT SINK THERMAL EFFECTS simplified abstract
ELECTROMIGRATION EVALUATION METHODOLOGY WITH CONSIDERATION OF BOTH SELF-HEATING AND HEAT SINK THERMAL EFFECTS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsien Yu Tseng of Hsinchu (TW)
Chun-Wei Chang of Hsinchu (TW)
Sheng-Feng Liu of Hsinchu (TW)
ELECTROMIGRATION EVALUATION METHODOLOGY WITH CONSIDERATION OF BOTH SELF-HEATING AND HEAT SINK THERMAL EFFECTS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18341400 Titled 'ELECTROMIGRATION EVALUATION METHODOLOGY WITH CONSIDERATION OF BOTH SELF-HEATING AND HEAT SINK THERMAL EFFECTS'
Simplified Explanation
The abstract describes a method for analyzing the layout of an integrated circuit design to identify structures that are sensitive to heat, as well as structures that generate heat and structures that dissipate heat. The method includes a memory and a processor that calculate adjustments to the evaluation temperature of the heat sensitive structures. These adjustments take into account the effects of self-heating within the structure, as well as additional heating or cooling based on the thermal coupling to nearby heat generating or heat dissipating structures.
Original Abstract Submitted
An electromigration (EM) sign-off methodology that utilizes a system for analyzing an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes a memory and a processor configured for calculating adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat dissipating elements located within a defined thermal coupling volume or range of the heat sensitive structures.
