US Patent Application 18340454. INTEGRATED CIRCUIT STRUCTURE simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Hao Lu of Taoyuan City (TW)
Chien-I Kuo of Hsinchu County (TW)
Li-Li Su of Hsinchu County (TW)
Wei-Yang Lee of Taipei City (TW)
Yee-Chia Yeo of Hsinchu City (TW)
INTEGRATED CIRCUIT STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18340454 Titled 'INTEGRATED CIRCUIT STRUCTURE'
Simplified Explanation
This abstract describes a method for manufacturing an integrated circuit (IC) structure. The process involves etching recesses in a substrate and then forming a sacrificial epitaxial plug in one of the recesses. Epitaxial features are then formed in both recesses, with the first epitaxial feature being positioned over the sacrificial plug. Source/drain epitaxial structures are formed over the epitaxial features, and a gate structure is placed between them. The sacrificial plug and the first epitaxial feature are then removed, creating an opening that exposes the backside of the first source/drain epitaxial structure. Finally, a backside via is formed in this opening.
Original Abstract Submitted
A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.
