US Patent Application 18340059. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
BYOUNGIL Lee of Hwaseong-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18340059 Titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES'
Simplified Explanation
The abstract describes a type of 3D semiconductor memory device that is built in a horizontal structure on top of a substrate. It consists of stacked horizontal patterns, electrodes, vertical patterns, and a separation structure. The lowermost electrode has inner sidewalls facing each other with the separation structure in between, as does the second horizontal pattern. The maximum distance between the inner sidewalls of the lowermost electrode is smaller than the maximum distance between the inner sidewalls of the second horizontal pattern.
Original Abstract Submitted
3D semiconductor memory devices may include a horizontal structure that may be on an upper surface of a substrate and may include first and second horizontal patterns sequentially stacked on the upper surface of the substrate, a stack structure including electrodes stacked on the horizontal structure, a vertical pattern extending through the electrodes and connected to the first horizontal pattern, and a separation structure intersecting the stack structure and the horizontal structure and protruding into the upper surface of the substrate. A lowermost electrode may have first inner sidewalls facing each other with the separation structure interposed therebetween. The second horizontal pattern may have second inner sidewalls facing each other with the separation structure interposed therebetween. A maximum distance between the first inner sidewalls in the first direction may be less than a maximum distance between the second inner sidewalls in the first direction.
