US Patent Application 18337767. FINFET AND GATE-ALL-AROUND FET WITH SELECTIVE HIGH-K OXIDE DEPOSITION simplified abstract
Contents
FINFET AND GATE-ALL-AROUND FET WITH SELECTIVE HIGH-K OXIDE DEPOSITION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Han Tsai of Kaohsiung City (TW)
Jen-Hsiang Lu of Taipei City (TW)
Shih-Hsun Chang of Hsinchu (TW)
FINFET AND GATE-ALL-AROUND FET WITH SELECTIVE HIGH-K OXIDE DEPOSITION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18337767 Titled 'FINFET AND GATE-ALL-AROUND FET WITH SELECTIVE HIGH-K OXIDE DEPOSITION'
Simplified Explanation
This abstract describes a semiconductor device structure that includes various components such as gate spacers, a gate electrode layer, an insulating layer, and a gate dielectric layer. The gate spacers and insulating layer have hydrophobic surfaces, which means they repel water. These hydrophobic surfaces are in direct contact with specific sidewall surfaces of the gate electrode layer. The dimensions of the gate dielectric layer are smaller than those of the gate electrode layer.
Original Abstract Submitted
A semiconductor device structure is provided. The semiconductor device structure includes first and second gate spacers formed over a semiconductor substrate, longitudinally extending along a first direction, and separated from each other by a gate electrode layer. A first insulating layer longitudinally extends along a second direction to pass through the gate electrode layer and the first and second gate spacers. A gate dielectric layer has a top surface covered by the gate electrode layer. The top width of the gate dielectric layer is less than that of the gate electrode layer. The first and second gate spacers and the first insulating layer have first, second and third hydrophobic surfaces, respectively. These hydrophobic surfaces are in direct contact with first, second and third sidewall surfaces of the gate electrode layer, respectively.
