US Patent Application 18337039. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jui-Fen Chien of Taichung City (TW)
Hsiao-Kuan Wei of Taoyuan County (TW)
Hsien-Ming Lee of Changhua (TW)
Chin-You Hsu of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18337039 Titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME'
Simplified Explanation
The abstract describes a semiconductor device that includes two transistors of the same type. Each transistor has a work function layer, which is made up of an underlying layer. The underlying layers in both transistors are metal nitride layers with at least two different metals. However, the first transistor has a thicker underlying layer compared to the second transistor. The abstract also mentions a method for manufacturing a gate structure for a semiconductor device.
Original Abstract Submitted
Provided is a semiconductor device including a first transistor of a first type comprising a first work function layer, the first work function layer comprising a first underlying layer; and a second transistor of the first type comprising a second work function layer, the second work function layer comprising a second underlying layer. The first and second underlying layers each comprises a metal nitride layer with at least two kinds of metals, and a thickness of the first underlying layer is greater than a thickness of the second underlying layer. A method of manufacturing a gate structure for a semiconductor device is also provided.
