US Patent Application 18336790. MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALIGNED TOP ELECTRODE VIA simplified abstract
Contents
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALIGNED TOP ELECTRODE VIA
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Hao Liao of Taichung City (TW)
Hsi-Wen Tien of Xinfeng Township (TW)
Chih-Wei Lu of Hsinchu City (TW)
Pin-Ren Dai of New Taipei City (TW)
Chung-Ju Lee of Hsinchu City (TW)
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALIGNED TOP ELECTRODE VIA - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336790 Titled 'MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALIGNED TOP ELECTRODE VIA'
Simplified Explanation
The abstract describes a type of MRAM (Magnetic Random Access Memory) device. It consists of several layers including a bottom electrode, a magnetic tunnel junction (MTJ) structure, and a top electrode. Spacers are placed on the sides of the top electrode and the MTJ structure. An etch stop layer is added on top of the spacers, covering their surfaces. Finally, a top electrode via is created on the top electrode and the etch stop layer.
Original Abstract Submitted
An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure. The MRAM device further includes a first etch stop layer on the spacers. A bottommost surface of the first etch stop layer covers a topmost surface of the spacers. In addition, the MRAM device includes a top electrode via on the top electrode and the first etch stop layer.
