US Patent Application 18336370. SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract

SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shahaji B. More of Hsinchu City (TW)

SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18336370 Titled 'SOURCE/DRAIN EPITAXIAL STRUCTURES FOR SEMICONDUCTOR DEVICES'

Simplified Explanation

The abstract describes a method for creating a semiconductor device with optimized dimensions. The method involves creating two fin structures on a substrate and adding a spacer layer on top. A first spacer structure is formed next to the first fin structure, and a first epitaxial structure is formed next to the first spacer structure. The first and second fin structures are separated by an isolation layer. A second spacer structure is then formed next to the second fin structure, and a second epitaxial structure is formed next to the second spacer structure. The second spacer structure is taller than the first spacer structure. The second epitaxial structure contains a different type of dopant compared to the first epitaxial structure.

Original Abstract Submitted

The present disclosure describes a method of forming a semiconductor device having epitaxial structures with optimized dimensions. The method includes forming first and second fin structures on a substrate, forming a spacer layer on the first and second fin structures, forming a first spacer structure adjacent to the first fin structure, and forming a first epitaxial structure adjacent to the first spacer structure. The first and second fin structures are separated by an isolation layer. The first spacer structure has a first height above the isolation layer. The method further includes forming a second spacer structure adjacent to the second fin structure and forming a second epitaxial structure adjacent to the second spacer structure. The second spacer structure has a second height above the isolation layer greater than the first height. The second epitaxial structure includes a type of dopant different from the first epitaxial structure.