US Patent Application 18336258. PACKAGE STRUCTURE simplified abstract
Contents
PACKAGE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Chen Lai of Hsinchu County (TW)
Chin-Hua Wang of New Taipei City (TW)
Ming-Chih Yew of Hsinchu City (TW)
Che-Chia Yang of Taipei City (TW)
Shu-Shen Yeh of Taoyuan City (TW)
Po-Yao Lin of Hsinchu County (TW)
PACKAGE STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336258 Titled 'PACKAGE STRUCTURE'
Simplified Explanation
This abstract describes a package structure for a semiconductor die. The structure includes a redistribution structure, bonding elements, and an underfill layer. The semiconductor die has a rectangular shape when viewed from above. The pitch of the bonding elements is defined as the sum of the diameter of the bonding elements and the spacing between them. The redistribution structure has a circular area that is completely covered by and in direct contact with the underfill layer. The center of this circular area is aligned with one corner of the rectangular shape of the semiconductor die. The diameter of this circular area is larger than twice the pitch of the bonding elements.
Original Abstract Submitted
A package structure is provided. The package structure includes a semiconductor die over a redistribution structure, bonding elements below the redistribution structure, and an underfill layer surrounding the bonding elements and the redistribution structure. The semiconductor die has a rectangular profile in a plan view. A pitch of the bonding elements is defined as the sum of a diameter of the bonding elements and a spacing between neighboring two of the bonding elements. A first circular area of the redistribution structure is entirely covered and in direct contact with the underfill layer. The center of the first circular area is aligned with a first corner of the rectangular profile of the semiconductor die. A diameter of the first circular area is greater than twice the pitch of the bonding elements.
