US Patent Application 18336168. METHODS OF FORMING CONTACT FEATURES IN FIELD-EFFECT TRANSISTORS simplified abstract
Contents
METHODS OF FORMING CONTACT FEATURES IN FIELD-EFFECT TRANSISTORS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yi-Hsiung Lin of Hsinchu County (TW)
Yi-Hsun Chiu of Hsinchu County (TW)
Shang-Wen Chang of Hsinchu County (TW)
METHODS OF FORMING CONTACT FEATURES IN FIELD-EFFECT TRANSISTORS - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18336168 Titled 'METHODS OF FORMING CONTACT FEATURES IN FIELD-EFFECT TRANSISTORS'
Simplified Explanation
This abstract describes a semiconductor structure that consists of two semiconductor fins placed next to each other on a substrate. A metal gate structure is positioned over these fins in a direction perpendicular to their length. On top of each fin, there is an epitaxial source/drain (S/D) feature. An interlayer dielectric (ILD) layer is placed over these S/D features, and an S/D contact is directly above them. The S/D contact makes direct contact with the first S/D feature but is isolated from the second S/D feature by the ILD layer.
Original Abstract Submitted
A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin. The first and the second semiconductor fins extend lengthwise along a first direction over a substrate. A metal gate structure is disposed over the first and second semiconductor fins, the metal gate structure extending lengthwise along a second direction perpendicular to the first direction. A first epitaxial source/drain (S/D) feature is disposed over the first semiconductor fin, and a second epitaxial S/D feature is disposed over the second semiconductor fin. An interlayer dielectric (ILD) layer is disposed over the first and the second epitaxial S/D features. And an S/D contact is disposed directly above the first and second epitaxial S/D features. The S/D contact directly contacts the first epitaxial S/D feature, and the S/D contact is isolated from the second epitaxial S/D feature by the ILD layer.
