US Patent Application 18336100. EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION simplified abstract

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chun-Yuan Chen of Tainan City (TW)

Ching-Chun Wang of Tainan (TW)

Dun-Nian Yaung of Taipei City (TW)

Hsiao-Hui Tseng of Tainan City (TW)

Jhy-Jyi Sze of Hsin-Chu City (TW)

Shyh-Fann Ting of Tainan City (TW)

Tzu-Jui Wang of Fengshan City (TW)

Yen-Ting Chiang of Tainan City (TW)

Yu-Jen Wang of Kaohsiung City (TW)

Yuichiro Yamashita of Hsinchu City (TW)

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18336100 Titled 'EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION'

Simplified Explanation

The abstract describes an image sensor integrated chip that includes a semiconductor substrate with trenches on its sidewalls. These trenches are located on opposite sides of a photodiode and extend from the upper surface of the substrate into the substrate itself. A doped region is present along the upper surface and sides of the photodiode. The chip also has two layers of dielectric material, with the first layer lining the sidewalls and upper surface of the substrate, and the second layer lining the sidewalls and upper surface of the first dielectric layer. The width of the doped region varies at different heights along the side of the photodiode.

Original Abstract Submitted

The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varyies at different heights along the side of the photodiode.