US Patent Application 18336060. HIGH ELECTRON MOBILITY TRANSISTOR, PREPARATION METHOD, AND POWER AMPLIFIER/SWITCH simplified abstract
HIGH ELECTRON MOBILITY TRANSISTOR, PREPARATION METHOD, AND POWER AMPLIFIER/SWITCH
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HIGH ELECTRON MOBILITY TRANSISTOR, PREPARATION METHOD, AND POWER AMPLIFIER/SWITCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 18336060 titled 'HIGH ELECTRON MOBILITY TRANSISTOR, PREPARATION METHOD, AND POWER AMPLIFIER/SWITCH
Simplified Explanation
The patent application describes a high electron mobility transistor (HEMT) technology.
- The HEMT includes a substrate, a GaN channel layer, and an AlGaN barrier layer stacked on the substrate.
- Two through holes are opened in the AlGaN barrier layer, spaced apart from each other.
- Each through hole penetrates the AlGaN barrier layer and has a stepped structure on its hole wall.
- The through holes have an upper opening away from the substrate and a lower opening close to the substrate.
- The HEMT also includes a source and a drain, which fill up the through holes and are directly connected to the GaN channel layer.
Original Abstract Submitted
The technology of this application relates to a high electron mobility transistor, including a substrate and a GaN channel layer and an AlGaN barrier layer that are sequentially stacked on the substrate. Two through holes that are spaced apart from each other are opened in the AlGaN barrier layer. Each of the through holes penetrates the AlGaN barrier layer along a thickness direction of the AlGaN barrier layer, and a hole wall of each of the through holes has at least one stepped structure. Each of the through holes has an upper opening away from the substrate and a lower opening close to the substrate. The high electron mobility transistor further includes a source and a drain, where the source and the drain each fill up a through hole and are directly in contact with and connected to the GaN channel layer.
