US Patent Application 18335806. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Mei-Yun Wang of Chu-Pei City (TW)
Hsien-Huang Liao of Hsinchu (TW)
Tung-Heng Hsieh of Zhudong Town (TW)
Bao-Ru Young of Zhubei City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18335806 Titled 'SEMICONDUCTOR DEVICE AND METHOD'
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device. It involves creating two fins on a substrate, with a metal gate stack formed over them. A layer of dielectric material is deposited over the gate stack, and a gate contact is created to physically connect with the metal gate stack. The gate contact is positioned between the two fins and is closer to one of the fins if the distance between the fins is larger than a certain threshold.
Original Abstract Submitted
In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.
