US Patent Application 18335741. CONTACT FORMATION METHOD AND RELATED STRUCTURE simplified abstract
Contents
CONTACT FORMATION METHOD AND RELATED STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Li-Zhen Yu of New Taipei City (TW)
Chia-Hao Chang of Hsinchu City (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
CONTACT FORMATION METHOD AND RELATED STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18335741 Titled 'CONTACT FORMATION METHOD AND RELATED STRUCTURE'
Simplified Explanation
This abstract describes a semiconductor device that includes a metal gate structure with sidewall spacers. The top surface of the metal gate structure is recessed compared to the top surface of the sidewall spacers. The device also has a metal cap layer that is wider at the bottom than at the top. Additionally, there is a dielectric material on either side of the metal cap layer, with the sidewall spacers and part of the metal gate structure located beneath the dielectric material.
Original Abstract Submitted
A semiconductor device includes a metal gate structure having sidewall spacers disposed on sidewalls of the metal gate structure. In some embodiments, a top surface of the metal gate structure is recessed with respect to a top surface of the sidewall spacers. The semiconductor device may further include a metal cap layer disposed over and in contact with the metal gate structure, where a first width of a bottom portion of the metal cap layer is greater than a second width of a top portion of the metal cap layer. In some embodiments, the semiconductor device may further include a dielectric material disposed on either side of the metal cap layer, where the sidewall spacers and a portion of the metal gate structure are disposed beneath the dielectric material.
