US Patent Application 18335637. Semiconductor Device and Method of Manufacture simplified abstract
Contents
Semiconductor Device and Method of Manufacture
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Hung Cheng Lin of Hsinchu (TW)
Chunyao Wang of Zhubei City (TW)
Semiconductor Device and Method of Manufacture - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18335637 Titled 'Semiconductor Device and Method of Manufacture'
Simplified Explanation
The abstract describes a semiconductor device and its manufacturing method. It explains that a dielectric fin is created to separate neighboring semiconductor fins. The dielectric fin is made using a deposition process, where specific deposition times and temperatures are used to enhance the resistance of the dielectric fin to subsequent etching processes.
Original Abstract Submitted
A semiconductor device and method of manufacture are provided. In embodiments a dielectric fin is formed in order to help isolate adjacent semiconductor fins. The dielectric fin is formed using a deposition process in which deposition times and temperatures are utilized to increase the resistance of the dielectric fin to subsequent etching processes.
