US Patent Application 18335375. MEMORY CONTROLLER PERFORMING SELECTIVE AND PARALLEL ERROR CORRECTION, SYSTEM INCLUDING THE SAME AND OPERATING METHOD OF MEMORY DEVICE simplified abstract

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MEMORY CONTROLLER PERFORMING SELECTIVE AND PARALLEL ERROR CORRECTION, SYSTEM INCLUDING THE SAME AND OPERATING METHOD OF MEMORY DEVICE

Inventors

Hyeokjun Choe of HWASEONG-SI (KR)


Heehyun Nam of SEOUL (KR)


Jeongho Lee of GWACHEON-SI (KR)


Younho Jeon of GIMHAE-SI (KR)


MEMORY CONTROLLER PERFORMING SELECTIVE AND PARALLEL ERROR CORRECTION, SYSTEM INCLUDING THE SAME AND OPERATING METHOD OF MEMORY DEVICE - A simplified explanation of the abstract

  • This abstract for appeared for patent application number 18335375 Titled 'MEMORY CONTROLLER PERFORMING SELECTIVE AND PARALLEL ERROR CORRECTION, SYSTEM INCLUDING THE SAME AND OPERATING METHOD OF MEMORY DEVICE'

Simplified Explanation

The abstract describes a memory controller that manages the memory accessed by a device connected to a host processor through a bus. The memory controller has two interface circuits, one for communication with the host processor and the other for communication with the memory. It also includes an error detection circuit that identifies errors in data received from the memory in response to a read request from the host processor. The memory controller has a variable error correction circuit that corrects the errors based on a reference latency and error correction level specified in an error correction option. Additionally, there is a fixed error correction circuit that operates simultaneously with the variable error correction circuit to correct the errors.


Original Abstract Submitted

A memory controller is provided that is configured to control a memory accessed by a device connected to a host processor via a bus. The memory controller is configured to control a memory accessed by a device connected to a host processor via a bus, and includes a first interface circuit configured to communicate with the host processor; a second interface circuit configured to communicate with the memory; an error detection circuit configured to detect an error present in data received from the second interface circuit in response to a first read request received from the first interface circuit; a variable error correction circuit configured to correct the error based on at least one of a reference latency and a reference error correction level included in a first error correction option; and a fixed error correction circuit configured to correct the error in parallel with an operation of the variable error correction circuit.