US Patent Application 18335176. DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY simplified abstract
Contents
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hai-Dang Trinh of Hsinchu (TW)
Chii-Ming Wu of Taipei City (TW)
Cheng-Yuan Tsai of Chu-Pei City (TW)
Tzu-Chung Tsai of Hsinchu County (TW)
Fa-Shen Jiang of Taoyuan City (TW)
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18335176 Titled 'DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY'
Simplified Explanation
The abstract describes an integrated chip that includes multiple layers of conductive and dielectric materials. The chip has a first conductive structure on top of a substrate, a second conductive structure on top of the first one, and a data storage structure between them. The data storage structure consists of three dielectric layers with different bandgaps.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an integrated chip. A first conductive structure overlies a substrate. A second conductive structure overlies the first conductive structure. A data storage structure is disposed between the first and second conductive structures. The data storage structure includes a first dielectric layer, a second dielectric layer, and a third dielectric layer. Respective bandgaps of the first, second, and third dielectric layers are different from one another.
