US Patent Application 18334640. EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF simplified abstract
Contents
EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Tsung Shih of Hsinchu City (TW)
Yu-Hsun Wu of New Taipei City (TW)
Bo-Tsun Liu of Taipei City (TW)
Tsung-Chuan Lee of Taipei City (TW)
EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18334640 Titled 'EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF'
Simplified Explanation
The abstract describes a method for creating an extreme ultraviolet (EUV) mask. This involves creating a stack of alternating layers of molybdenum (Mo) and silicon (Si) on a mask substrate. A layer of ruthenium is then added on top of the stack, which is doped with certain elements. An absorber layer is formed over the ruthenium layer, and then the absorber layer is etched to create a pattern.
Original Abstract Submitted
A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.
