US Patent Application 18334551. Geometric Mask Rule Check With Favorable and Unfavorable Zones simplified abstract

Geometric Mask Rule Check With Favorable and Unfavorable Zones

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Ming Chang of Hsinchu (TW)

Shinn-Sheng Yu of Hsinchu (TW)

Jue-Chin Yu of Taichung City (TW)

Ping-Chieh Wu of Zhubei City (TW)

Geometric Mask Rule Check With Favorable and Unfavorable Zones - A simplified explanation of the abstract

• This abstract for appeared for US patent application number 18334551 Titled 'Geometric Mask Rule Check With Favorable and Unfavorable Zones'

Simplified Explanation

The abstract describes a method that involves creating a map based on diffraction patterns, dividing it into favorable and unfavorable zones. Sub-resolution patterns are then placed in the favorable zone and undergo geometric operations to generate modified patterns. These modified patterns extend into the favorable zone and are positioned away from the unfavorable zone.

Original Abstract Submitted

A method includes generating a diffraction map from a plurality of target patterns, generating a favorable zone and an unfavorable zone from the diffraction map, placing a plurality of sub-resolution patterns in the favorable zone, and performing a plurality of geometric operations on the plurality of sub-resolution patterns to generate modified sub-resolution patterns. The modified sub-resolution patterns extend into the favorable zone, and are away from the unfavorable zone.