US Patent Application 18334546. SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME

Inventors

Sungmin Hwang of HWASEONG-SI (KR)

Jiwon Kim of SEOUL (KR)

Jaeho Ahn of SEOUL (KR)

Joonsung Lim of SEONGNAM-SI (KR)

Sukkang Sung of SEONGNAM-SI (KR)

SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

• This abstract for appeared for patent application number 18334546 Titled 'SEMICONDUCTOR DEVICE AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SAME'

Simplified Explanation

This abstract describes a semiconductor device that consists of various components. It includes lower circuit patterns on a lower substrate, lower bonding patterns that are electrically connected to the lower circuit patterns, and upper bonding patterns that contact the lower bonding patterns. There is also a passive device on the upper bonding patterns, which includes a conductive material and contacts one of the upper bonding patterns. The device further features a gate electrode structure with gate electrodes that are spaced apart in one direction and extend in another direction. The length of the gate electrodes increases gradually from the bottom to the top of the structure. Additionally, there is a channel that extends through at least a portion of the gate electrode structure, and an upper substrate is placed on top of the channel.

Original Abstract Submitted

A semiconductor device includes lower circuit patterns on a lower substrate; lower bonding patterns on the lower circuit patterns, the lower bonding patterns including a conductive material and being electrically connected to the lower circuit patterns; upper bonding patterns on and contacting the lower bonding patterns, and including a conductive material; a passive device on the upper bonding patterns, and including a conductive material and contacting one of the upper bonding patterns; a gate electrode structure on the passive device, and including gate electrodes spaced apart from each other in a first direction, each of which extends in a second direction, and extension lengths in the second direction of the gate electrodes increasing from a lowermost level toward an uppermost level in a stepwise manner; a channel extending through at least a portion of the gate electrode structure; and an upper substrate on the channel.